M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 37

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 6.
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4. Addresses differ in x8 mode.
5. See
of status register data polling bit and by a read operation that outputs the data, D
Program command.
Table 19: Write AC characteristics
DQ0-DQ7/
DQ8-DQ15
A0-A20/
A–1
E
G
W
Write enable controlled program waveforms (8-bit mode)
tAVAV
tGHWL
tELWL
tWLWH
tDVWH
3rd cycle
tAVWL
555h
AOh
and
4th cycle
Table 18: Read AC characteristics
tWHEH
tWHDX
PA
tWHWL
PD
tWLAX
tWHWH1
Data Polling
PA
DQ7
Section 5.1: Data polling bit
D OUT
tAVAV
for details on the timings.
OUT
tGHQZ
Read cycle
, programmed by the previous
D OUT
tELQV
tGLQV
(DQ7)).
tAXQX
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