M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 51

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

M29W640GH, M29W640GL, M29W640GT, M29W640GB
DC and AC parameters
Figure 16. Write AC waveforms, chip enable controlled (8-bit mode)
tAVAV
A0-A20/
VALID
A–1
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL1
G
tGHEL
tELEH
E
tEHEL1
tDVEH
tEHDX
DQ0-DQ7/
VALID
DQ8-DQ15
V CC
tVCHWL
RB
tEHRL
AI05561
51/90