M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 21

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 7.
1. X = V
Bus read
Bus write
Output disable
Standby
Read manufacturer
code
Read device code
(cycle 1)
Read device code
(cycle 2)
Read device code
(cycle 3)
Read extended
memory block
verify code
Read block
protection status
Operation
IL
or V
IH
Bus operations, BYTE = V
.
V
V
V
V
V
V
V
E
X
IH
IL
IL
IL
IL
IL
IL
V
V
V
V
V
V
V
G
X
IH
IH
IL
IL
IL
IL
IL
V
V
V
V
V
V
V
W
X
IH
IH
IH
IH
IH
IH
IL
DQ15A–1, A0-A21
Command address
Address Inputs
IL
Cell address
(1)
Table 9
X
X
DQ14-
DQ8
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
M29W640GH,
M29W640GH,
M29W640GT,
M29W640GL,
M29W640GL,
M29W640GT,
M29W640GB
M29W640GB
M29W640GB
M29W640GH
M29W640GL
M29W640GT
Data Inputs/Outputs
00h (unprotected)
01h (protected)
Data Output
Data Input
DQ7-DQ0
Hi-Z
Hi-Z
20h
7Eh
88h (factory locked)
98h(factory locked)
08h (customer
18h (customer
lockable)
lockable)
0Ch
10h
00h
01h
21/90