M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 61

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M29W640GB60ZA6E

Manufacturer Part Number
M29W640GB60ZA6E
Description
Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W640GB60ZA6E

Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
9
Note:
Ordering information
Table 27.
1. Packages only available upon request.
This product is also available with the extended block factory locked. For a list of available
options (speed, package, etc.) or for further information on any aspect of this device, please
contact your nearest Numonyx sales office.
Example:
Device type
M29
Operating voltage
W = V
Device function
640G = 64-Mbit (x8/x16), boot block, uniform or boot
block
Array matrix
T = top boot
B = bottom boot
H = last block protected by V
L = first block protected by V
Speed
60 = 60 ns
70 = 70 ns
90 = 90 ns
7A = 70 ns Automotive -40 °C to 85 °C Certified Part,
used in conjiuction with temperature range option 6 to
distinguish the Automotive Part.
Package
NA = TSOP48: 12 x 20 mm
NB = TSOP56: 14 x 20 mm
ZA= TFBGA48: 6 x 8 mm - 0.8 mm pitch
ZF = TBGA64: 10 x 13 mm -1 mm pitch
ZS = FBGA64: 11 x 13 mm, 1 mm pitch
Temperature range
6 = 40 to 85 °C
3 = 40 to 125 °C
Option
E = RoHS package, standard packing
F = RoHS package, tape & reel packing
CC
= 2.7 to 3.6 V
Ordering information scheme
(1)
PP
PP
/WP
/WP
(1)
M29W640GT
70
NA 6
F
61/90

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