M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 76

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 33.
76/90
1Ch
1Dh
1Bh
1Eh
1Fh
x16
20h
21h
22h
23h
24h
25h
26h
Address
3Ch
4Ch
3Ah
3Eh
4Ah
36h
38h
40h
42h
44h
46h
48h
x8
CFI query system interface information
00C5h
00B5h
000Ah
0027h
0036h
0004h
0004h
0000h
0004h
0004h
0003h
0000h
Data
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Typical timeout per single Byte/Word Program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual Block Erase = 2
Typical timeout for full Chip Erase = 2
Maximum timeout for Byte/Word Program = 2
Maximum timeout for Write Buffer Program = 2
Maximum timeout per individual Block Erase = 2
Maximum timeout for Chip Erase = 2
CC
CC
PP
PP
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
Description
n
n
times typical
ms
n
n
n
times typical
ms
n
times typical
n
times typical
μs
n
μs
256 μs
200 μs
12.5 V
11.5 V
Value
16 μs
16 μs
2.7 V
3.6 V
NA
NA
1 s
8 s