M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 52

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 19.
1. Sampled only, not 100% tested.
52/90
Symbol
t
t
t
WHRL
t
t
t
t
t
t
t
t
t
t
WHGL1
t
VCHWL
t
t
t
t
t
t
t
VCHEL
t
t
WHWL
EHGL1
EHEL1
t
t
WLWH
DVWH
WHDX
WHEH
EHWH
GHWL
WLEL
DVEH
EHDX
AVWL
WLAX
GHEL
ELWL
ELEH
ELAX
EHRL
AVAX
AVEL
(1)
t
t
t
t
GHWL
t
t
t
GHEL
BUSY
Write AC characteristics
t
t
t
t
WPH
t
t
OEH
CPH
Alt
t
t
t
t
t
VCS
WC
WH
WS
WP
CS
CP
DS
DH
CH
AS
AH
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Chip Enable Low
Write Enable Low to Write Enable High
Chip Enable Low to Chip Enable High
Input Valid to Write Enable or Chip Enable
High
Write Enable or Chip Enable High to Input
Transition
Write Enable High to Chip Enable High
Chip Enable High to Write Enable High
Write Enable High to Write Enable Low
Output Enable Hold time
Chip Enable High to Chip Enable Low
Address Valid to Write Enable or Chip Enable
Low
Write Enable or Chip Enable Low to Address
Transition
Output Enable High to Write Enable Low
Output Enable High to Chip Enable Low
Program/Erase Valid to RB Low
V
CC
High to Chip Enable Low
Parameter
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
M29W640GT, M29W640GB,
M29W640GH, M29W640GL
60
60
35
35
30
25
25
45
50
0
0
0
0
0
0
0
0
0
0
70
70
35
35
30
25
25
45
50
0
0
0
0
0
0
0
0
0
0
90
90
35
35
30
25
25
45
50
0
0
0
0
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs