M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 46

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 15.
Figure 11. AC measurement I/O waveform
Figure 12. AC measurement load circuit
Ambient operating temperature
Load capacitance (C
Input rise and fall times
Input pulse voltages
Input and output timing ref. voltages
V
CC
supply voltage
Operating and AC measurement conditions
Parameter
L
)
V PP
V CC
0.1µF
0V
C L includes JIG capacitance
V CC
0.1µF
DEVICE
UNDER
TEST
M29W640GT, M29W640GB,
M29W640GH, M29W640GL
Min
–40
2.7
C L
0 to V
V CC
V
V CC /2
AI05557
CC
30
AI05558
/2
CC
25k
25k
Max
3.6
85
10
Unit
°C
pF
ns
V
V
V