M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 22

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 8.
1. X = V
Table 9.
1. A9 = V
2. A12- A21 must be set to the block address.
22/90
Bus read
Bus write
Output disable
Standby
Read manufacturer
code
Read device code
(cycle 1)
Read device code
(cycle 2)
Read device code
(cycle 3)
Read extended
memory block verify
code
Read block
protection status
Manufacturer code
Device code (cycle 1)
Device code (cycle 2)
Device code (cycle 3)
Extended memory block verify code
Block protection status
Operation
IL
ID
or V
; other address bits set to V
IH
Bus operations, BYTE = V
Read electronic signature addresses
.
Code
V
V
V
V
V
V
V
E
X
IH
IL
IL
IL
IL
IL
IL
V
V
V
V
V
V
V
G
X
IH
IH
IL
IL
IL
IL
IL
V
V
V
V
V
V
V
W
X
IH
IH
IH
IH
IH
IH
IL
IL
or V
IH
.
IH
Command Address
(1)
Address Inputs
Cell Address
BYTE = V
A0-A21
Table 9
A7-A0
02h
X
X
0Eh
0Fh
00h
01h
03h
(1)
(2)
IH
M29W640GH,
M29W640GL
M29W640GT,
M29W640GB
M29W640GH,
M29W640GT
M29W640GL,
M29W640GL,
M29W640GT,
M29W640GB
M29W640GB
M29W640GH
DQ15A–1, DQ14-DQ0
Data Inputs/Outputs
0000h (unprotected)
0001h (protected)
A6-A0, DQ15A–1
Data Output
Data Input
BYTE = V
0020h
227Eh
2288h (factory locked)
2298h(factory locked)
Hi-Z
Hi-Z
04h
2208h (customer
2218h (customer
1Ch
02h
1Eh
06h
00h
(2)
lockable)
lockable)
220Ch
2210h
2201h
2200h
IL