M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 59

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M29W640GB60ZA6E

Manufacturer Part Number
M29W640GB60ZA6E
Description
Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W640GB60ZA6E

Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
Figure 24. TBGA64 10 x 13 mm-8 x 8 active ball array, 1 mm pitch, package outline, bottom view
1. Drawing is not to scale.
Table 25.
Symbol
ddd
D1
FD
FE
SD
SE
A1
A2
E1
D
A
b
e
E
TBGA64 10 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package mechanical data
E
BALL "A1"
FD
E1
FE
A
10.00
13.00
0.30
0.80
7.00
1.00
7.00
1.50
3.00
0.50
0.50
Typ
e
millimeters
12.90
D1
0.20
0.35
9.90
Min
D
SD
b
10.10
13.10
Max
1.20
0.35
0.50
0.10
A1
SE
A2
0.012
0.031
0.394
0.276
0.039
0.512
0.276
0.059
0.118
0.020
0.020
Typ
BGA-Z23
inches
0.008
0.014
0.390
0.508
Min
ddd
0.0472
0.014
0.020
0.398
0.004
0.516
Max
59/90

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