M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 18

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

2.12
2.13
18/90
V
V
The command interface is disabled when the V
voltage, V
during power-up, power-down and power surges. If the program/erase controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
A 0.1 μF capacitor should be connected between the V
ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during program and erase operations, I
V
V
must be both connected to the system ground.
CC
SS
CC
SS
is the reference for all voltage measurements. The device features two V
provides the power supply for all operations (read, program and erase).
ground
supply voltage
LKO
. This prevents bus write operations from accidentally damaging the data
CC
supply voltage is less than the lockout
CC
supply voltage pin and the V
SS
pins which
SS
CC3
.