M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 49

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 18.
1. Sampled only, not 100% tested.
Symbol
t
t
t
t
t
GLQX
EHQZ
EHQZ
ELQX
t
t
t
t
t
t
t
t
t
AVQV1
t
t
t
GHQZ
GHQX
GLQV
EHQX
AXQX
BHQV
AVQV
ELQV
ELBH
BLQZ
AVAX
ELBL
(1)
(1)
(1)
(1)
t
t
t
t
t
t
PAGE
FHQV
t
ELFH
FLQZ
ELFL
t
ACC
t
t
t
Alt
OLZ
t
t
t
Read AC characteristics
RC
OE
OH
CE
HZ
DF
LZ
Address Valid to Next Address Valid
Address Valid to Output Valid
Address Valid to Output Valid (Page)
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable Low to Output Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or Address
Transition to Output Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
Parameter
Test condition
E = V
E = V
E = V
G = V
G = V
G = V
G = V
G = V
G = V
E = V
E = V
E = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
,
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
60
60
60
25
60
25
25
25
25
25
0
0
0
5
M29W640GB,
M29W640GH,
M29W640GT,
M29W640GL
70
70
70
30
70
30
30
30
25
30
0
0
0
5
90
90
90
30
90
30
30
30
25
30
0
0
0
5
49/90
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns