M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 8

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 1.
Table 2.
1. V
8/90
DQ15A–1 (or DQ15)
PP
/WP may be left floating since it is internally connected to an pull-up resistor to enable program/erase operations,
DQ8-DQ14
DQ0-DQ7
V
A0-A21
Name
BYTE
PP
V
V
RP
RB
NC
W
G
E
CC
SS
/WP
The M29W640G has an extra block, the extended block, of 128 words in x16 mode or of
256 bytes in x8 mode that can be accessed using a dedicated command. The extended
block can be protected and so is useful for storing security information. However the
protection is not reversible, once protected the protection cannot be undone.
The M29W640GT, M29W640GB, M29W640GH and M29W640GL, are offered in TSOP48
(12 x 20 mm), TSOP56 (14 x 20 mm), TFBGA48 (6 x 8 mm, 0.8 mm pitch), and TBGA64
(10 x 13 mm, 1 mm pitch) packages.
The memory is delivered with all the bits erased (set to ‘1’).
Logic diagram
Signal names
Address Inputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Input/Output or Address Input (or Data Input/Output)
Chip Enable
Output Enable
Write Enable
Reset/Block Temporary Unprotect
Ready/Busy
Byte/Word Organization Select
Supply voltage
Supply voltage for fast program (optional) or write protect
Ground
Not connected internally
(1)
A0-A21
RP
W
G
E
22
V CC
V SS
M29W640GB
M29W640GH
M29W640GT
M29W640GL
Description
V PP /WP
15
DQ0-DQ14
DQ15A–1
BYTE
RB
ai13694
Supply voltage
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Supply voltage
Direction
Output
Inputs
Input
Input
Input
Input
Input
–
–