M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 30

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

4.2.5
4.2.6
4.2.7
30/90
Quadruple Word Program command
This is used to write a page of four adjacent words (or 8 adjacent bytes), in x16 mode,
simultaneously. The addresses of the four words must differ only in A1 and A0.
12 V must be applied to the V
Byte Program command. Care must be taken because applying a 12 V voltage to the
V
Five bus write cycles are necessary to issue the command:
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory faster than with the standard program commands. When
the cycle time to the device is long, considerable time saving can be made by using these
commands. Three bus write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in read mode.
When V
unlock bypass mode and the Unlock Bypass Program command can be issued immediately.
Unlock Bypass Program command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the cycle time to the device is long, considerable
time saving can be made by using these commands. Three bus write operations are
required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in read mode.
The memory offers accelerated program operations through the V
When the system asserts V
enters the unlock bypass mode. The system may then write the two-cycle unlock bypass
program command sequence. The memory uses the higher voltage on the V
Protect pin, to accelerate the unlock bypass program operation.
Never raise V
memory may be left in an indeterminate state.
PP
/WP pin will temporarily unprotect any protected block.
The first bus cycle sets up the command.
The second bus cycle latches the address and the data of the first word to be written
The third bus cycle latches the address and the data of the second word to be written
The fourth bus cycle latches the address and the data of the third word to be written
The fifth bus cycle latches the address and the data of the fourth word to be written and
starts the program/erase controller.
PP
is applied to the V
PP
/Write Protect to V
PP
PP
PP
on the V
/Write Protect pin the memory automatically enters the
/Write Protect pin, V
PP
from any mode except read mode, otherwise the
PP
/Write Protect pin, the memory automatically
PP
/WP, prior to issuing a Quadruple
PP
/Write Protect pin.
PP
/Write