M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 47

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 16.
1. Sampled only, not 100% tested.
Table 17.
1. The maximum input leakage current is
2. Sampled only, not 100% tested.
Symbol
V
I
LKO
I
I
I
V
V
V
V
V
LI
I
CC1
CC2
CC3
V
I
LO
PP
OH
PP
OL
Symbol
IH
ID
(1)
IL
C
(2)
C
OUT
IN
Input leakage current
Output leakage current
Supply current (read)
Supply current (standby)
Supply current
(program/erase)
Input low voltage
Input high voltage
Voltage for
program acceleration
Current for
program acceleration
Output low voltage
Output high voltage
Identification voltage
Program/erase lockout
supply voltage
Device capacitance
DC characteristics
Parameter
Input capacitance
Output capacitance
V
V
PP
PP
/WP
/WP
Parameter
±
controller active
Program/erase
5 μA on the V
V
V
0 V
RP = V
E = V
CC
CC
0 V
E = V
Test condition
I
OH
I
OL
Test condition
f = 6 MHz
= 2.7 V ± 10%
= 2.7 V ± 10%
V
= –100
V
IL
= 1.8 mA
V
CC
PP
OUT
V
OUT
CC
, G = V
IN
IN
/WP pin.
±0.2 V,
= 0 V
V
±0.2 V
= 0 V
PP
V
V
V
μ
V
CC
PP
/WP = V
A
IL
IH
CC
,
/WP =
or V
IH
PP
Min
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
Max
12
V
6
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+ 0.3
Unit
pF
pF
Unit
47/90
mA
mA
mA
mA
μA
μ
μ
V
V
V
V
V
V
V
A
A