M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 33

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M29W640GB60ZA6E

Manufacturer Part Number
M29W640GB60ZA6E
Description
Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W640GB60ZA6E

Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
M29W640GH, M29W640GL, M29W640GT, M29W640GB
Command interface
4.3.3
Block Protect and Chip Unprotect commands
Groups of blocks can be protected against accidental program or erase. The protection
groups are shown in
Appendix A: Block
addresses,
Table 29: Top boot block addresses,
and
M29W640GB. The whole chip
M29W640GT
Table 30: Bottom boot block addresses,
can be unprotected to allow the data inside the blocks to be changed.
Block protect and chip unprotect operations are described in
Appendix D: Block
protection.
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