M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 42

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 13.
1. Unspecified data bits should be ignored.
42/90
Program
Program During Erase
Suspend
Write to Buffer and
Program Abort
Write to Buffer and
Program
Program Error
Chip Erase
Block Erase before
timeout
Block Erase
Erase Suspend
Erase Error
Operation
Status register bits
Faulty block address
Good block address
Non-erasing block
Non-erasing block
Non-erasing block
Erasing block
Erasing block
Erasing block
Any address
Any address
Any address
Any address
Any address
Any address
Address
(1)
DQ7
DQ7
DQ7
DQ7
DQ7
DQ7
0
0
0
0
0
1
0
0
No Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ6
Data read as normal
DQ5
0
0
0
0
1
0
0
0
0
1
0
0
1
DQ3
–
–
–
–
–
1
0
0
1
1
–
1
1
No Toggle
No Toggle
No Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ2
–
–
–
–
–
DQ1
0
–
1
0
–
–
–
–
–
–
–
–
–
–
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
RB
0
0
0
0
0
0
0
0
0