M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 45

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

6
Maximum ratings
Stressing the device above the rating listed in the
cause permanent damage to the device. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
operating sections of this specification is not implied.
Table 14.
1. Minimum voltage may undershoot to –2 V during transition and for less than 20 ns during transitions.
2. Maximum voltage may overshoot to V
3. V
Symbol
PP
V
T
T
V
V
V
PP
BIAS
must not remain at 12 V for more than a total of 80 hrs.
STG
CC
IO
ID
(3)
Absolute maximum ratings
Temperature under bias
Storage temperature
Input or output voltage
Supply voltage
Identification voltage
Program voltage
Parameter
CC
+2 V during transition and for less than 20 ns during transitions.
(1)(2)
Table 14: Absolute maximum ratings
–0.6
–0.6
–0.6
–0.6
Min
–50
–65
V
CC
Max
13.5
13.5
125
150
4
+0.6
Unit
°C
°C
V
V
V
V
45/90
may