M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 83

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 38.
1. Block protection groups are shown in
Block (Group)
Protect
Chip Unprotect
Block (Group)
Protection Verify
Block (Group)
Unprotection Verify
Operation
(1)
Programmer technique bus operations, BYTE = V
V
V
V
V
E
ID
IL
IL
IL
V
V
V
V
G
ID
ID
IL
IL
V
V
IL
IL
V
V
W
Pulse
Pulse
IH
IH
Appendix
A0, A2, A3 = V
A0, A2, A3 = V
A9 = V
A9 = V
A9 = V
A, Tables
A9 = V
ID
ID
ID
, A12-A21 = Block Address
, A12-A21 = Block Address
, A12-A21 = Block Address
ID
Address Inputs
, A12 = V
29
Others = X
Others = X
Others = X
Others = X
and 30.
A0-A21
IL
IL
, A1 = V
, A1 = V
IH
, A15 = V
IH
IH
, A6 = V
, A6 = V
IH
IH
or V
IH
IL
,
,
IL
DQ15A–1, DQ14-
Inputs/Outputs
Retry = XX00h
Retry = XX01h
Pass = XX01h
Pass = XX00h
Data
DQ0
X
X
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