M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 20

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

3.5
3.6
3.6.1
3.6.2
20/90
Automatic standby
If CMOS levels (V
more the memory enters automatic standby where the internal supply current is reduced to
the standby supply current, I
operation is in progress.
Special bus operations
Additional bus operations can be performed to read the electronic signature and also to
apply and remove block protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require V
applied to some pins.
Electronic signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in
Bus operations, BYTE = VIL
Block protect and chip unprotect
Groups of blocks can be protected against accidental program or erase. The protection
groups are shown in
can be unprotected to allow the data inside the blocks to be changed.
The V
Hardware
Block protect and chip unprotect operations are described in
PP
/Write Protect pin can be used to protect the blocks as described in
protection.
CC
Appendix A: Block
± 0.2 V) are used to drive the bus and the bus is inactive for 300 ns or
CC2
and
. The Data Inputs/Outputs will still output data if a bus read
Table 8: Bus operations, BYTE =
addresses,
Table 29
and
Appendix D: Block
Table
VIH, with A9 set to V
30. The whole chip
Table 6:
protection.
ID
Table 7:
to be
ID
.