M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 39

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 8.
1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while they are BA and 30h for a Block
2. BA is the block address.
3. See
Erase command.
Table 19: Write AC characteristics
DQ0-DQ7/
DQ8-DQ15
A0-A20/
A–1
E
G
W
Chip/block erase waveforms (8-bit mode)
tGHWL
tAVAV
tELWL
tWLWH
tDVWH
tAVWL
555h
AAh
and
Table 18: Read AC characteristics
tWHEH
tWHDX
2AAh
tWHWL
55h
tWLAX
555h
80h
555h
AAh
2AAh
for details on the timings.
55h
555h/BA
(1)
10h/
30h
AI12781
39/90