M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 56

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M29W640GB60ZA6E

Manufacturer Part Number
M29W640GB60ZA6E
Description
Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W640GB60ZA6E

Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
8
Figure 21. TSOP48 –48 lead plastic thin small outline, 12 x 20 mm, package outline, top view
1. Drawing is not to scale.
Table 22.
56/90
Symbol
CP
D1
A1
A2
E1
L1
A
B
C
E
e
L
Package mechanical
To meet environmental requirements, Numonyx offers these devices in RoHS compliant
packages, which are lead-free. The category of second level interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label.
TSOP48 – 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data
D1
DIE
24
1
12.00
20.00
18.40
0.10
1.00
0.22
0.50
0.60
0.80
Typ
E1
E
millimeters
18.30
11.90
19.80
0.05
0.95
0.17
0.10
0.50
Min
48
25
C
12.10
20.20
18.50
Max
1.20
0.15
1.05
0.27
0.21
0.10
0.70
B
e
A2
CP
0.004
0.039
0.009
0.472
0.787
0.724
0.020
0.024
0.031
Typ
A1
L1
inches
0.002
0.037
0.007
0.004
0.468
0.779
0.720
0.020
L
Min
TSOP-G
A
0.047
0.006
0.041
0.008
0.004
0.476
0.795
0.728
0.028
0.011
Max

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