M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 36

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 12.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. This time does not include the pre-programming time.
5. Block erase polling cycle time (see
6. Maximum value measured at worst case conditions for both temperature and V
7. Program polling cycle time (see
36/90
Chip Erase
Block Erase (64 Kbytes)
Erase Suspend Latency Time
Program (byte or word)
Double Byte
Double Word /Quadruple Byte Program
Quadruple Word / Octuple Byte Program
Single Byte and Word Program
32-byte/16-word Program using Write to Buffer and Program
32-byte/16-word Program using Write to Buffer and Program
(V
Chip Program (byte by byte)
Chip Program (word by word)
Chip Program (Double Word/Quadruple Byte Program)
Chip Program (Quadruple Word/Octuple Byte Program)
Program Suspend Latency Time
Program/Erase Cycles (per block)
Data Retention
PP
/WP = 12 V)
Program, erase times and endurance cycles
(4)(5)
Parameter
(7)
Figure
Figure
6,
Figure 7
19).
and
Figure
19).
Symbol
t
t
WHWH2
WHWH1
CC
CC
100,000
.
Min
after 100,000 program/erase cycles.
20
Typ
180
0.5
10
40
80
10
10
10
10
45
80
20
10
(1)(2)
Max
400
200
200
200
200
400
200
100
50
50
4
(6)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
cycles
years
Unit
μs
μs
μs
μs
μs
μs
μs
μs
μs
s
s
s
s
s
s