M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 86

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M29W640GB60ZA6E

Manufacturer Part Number
M29W640GB60ZA6E
Description
Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W640GB60ZA6E

Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
86/90
Figure 28. In-system equipment group protect flowchart
2. Block protection groups are shown in
3. RP can be either at V
IH
or at V
ADDRESS = GROUP ADDRESS
ADDRESS = GROUP ADDRESS
ADDRESS = GROUP ADDRESS
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = V IL , A1 = V IH
A0, A2, A3, A6 = V IL , A1 = V IH
ID
A0, A2, A3, A6 = V IL , A1 = V IH
A0, A2, A3, A6 = V IL , A1 = V IH
when using the In-system technique to protect the extended block.
ISSUE READ/RESET
Appendix
READ DATA
WRITE 60h
WRITE 60h
WRITE 40h
COMMAND
Wait 100µs
RP = V ID
RP = V IH
Wait 4µs
START
DATA
PASS
n = 0
01h
=
YES
A, Tables
NO
29
and 30.
ISSUE READ/RESET
COMMAND
RP = V IH
FAIL
= 25
++n
YES
NO
AI11563

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