M29W640GB60ZA6E NUMONYX, M29W640GB60ZA6E Datasheet - Page 53

• Manufacturer Part Number: M29W640GB60ZA6E
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 60ns 48-Pin TFBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W640GB60ZA6E

• Package: 48TFBGA
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 17. Reset/Block Temporary Unprotect AC waveforms
Figure 18. Accelerated program timing waveforms
Table 20.
1. Sampled only, not 100% tested.
2. For fast program operations using V
t
PHPHH
t
Symbol
t
t
t
t
t
VHVPP
PHWL
RHWL
PHGL
RHGL
RHEL
t
t
t
PHEL
PLPX
PLYH
V PP /WP
RB
RP
(1)(2)
W,
(1)
(1)
(1)
(1)
(1)
(1)
E, G
Reset/Block Temporary Unprotect AC characteristics
t
V IL or V IH
READY
t
VIDR
t
Alt
t
t
RH
RB
RP
V PP
RP High to Write Enable Low, Chip Enable Low,
Output Enable Low
RB High to Write Enable Low, Chip Enable Low,
Output Enable Low
RP pulse width
RP Low to read mode
RP rise time to V
V
PP
rise and fall time
tPLPX
tVHVPP
PP
/WP at 12 V.
ID
tPLYH
Parameter
tPHWL, tPHEL, tPHGL
Max
Min
Min
Min
Min
Min
tRHWL, tRHEL, tRHGL
tVHVPP
M29W640GT, M29W640GB,
M29W640GH, M29W640GL
tPHPHH
500
500
500
50
50
0
AI02931B
AI05563
53/90
Unit
ns
ns
ns
μs
ns
ns