C8051T627-B-GM Silicon Labs, C8051T627-B-GM Datasheet - Page 112

• Manufacturer Part Number: C8051T627-B-GM
• Description: 8-bit Microcontrollers - MCU UBS, 64K OTP MCU
• Manufacturer: Silicon Labs

Specifications of C8051T627-B-GM

• Rohs: yes
• Core: 8051
• Processor Series: C8051T627
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 48 MHz
• Program Memory Size: 64 KB
• Data Ram Size: 3328 B
• On-chip Adc: Yes
• Operating Supply Voltage: 1.8 V to 5.25 V
• Operating Temperature Range: - 40 C to + 85 C
• Package / Case: QFN-32
• Mounting Style: SMD/SMT
• Program Memory Type: EPROM

C8051T620/1/6/7 & C8051T320/1/2/3
18. Program Memory (EPROM)
C8051T620/1/6/7 & C8051T320/1/2/3 devices include 64, 32, or 16 kB of on-chip byte-programmable
EPROM for program code storage. The EPROM memory can be programmed via the C2 debug and pro-
gramming interface when a special programming voltage is applied to the V
bytes can be programmed in system using an external capacitor on the V
memory is programmable only once (i.e. non-erasable). Table 7.6 on page 38 shows the EPROM specifi-
cations.
18.1. Programming the EPROM Memory
18.1.1. EPROM Programming over the C2 Interface
Programming of the EPROM memory is accomplished through the C2 programming and debug interface.
When creating hardware to program the EPROM, it is necessary to follow the programming steps listed
below. Please refer to the “C2 Interface Specification” available at http://www.silabs.com for details on
communicating via the C2 interface. Section “30. C2 Interface” on page 288 has information about C2 reg-
ister addresses for the C8051T620/1/6/7 & C8051T320/1/2/3.
1. Reset the device using the RST pin.
2. Wait at least 20 ms before sending the first C2 command.
3. Place the device in core reset: Write 0x04 to the DEVCTL register.
4. Set the device to program mode (1st step): Write 0x40 to the EPCTL register.
5. Set the device to program mode (2nd step): Write 0x4A to the EPCTL register.
Note: Devices with a Date Code prior to 1040 should write 0x58 to the EPCTL register.
6. Apply the V
7. Write the first EPROM address for programming to EPADDRH and EPADDRL.
8. Write a data byte to EPDAT. EPADDRH:L will increment by 1 after this write.
9. Poll the EPBusy bit using a C2 Address Read command. Note: If EPError is set at this time, the write
10.If programming is not finished, return to Step 8 to write the next address in sequence, or return to
11. Remove the V
12.Remove program mode (1st step): Write 0x40 to the EPCTL register.
13.Remove program mode (2nd step): Write 0x00 to the EPCTL register.
14.Reset the device: Write 0x02 and then 0x00 to the DEVCTL register.
Important Note 1: There is a finite amount of time which V
which is cumulative over the life of the device. Refer to Table 7.1 on page 34 for the V
tion.
112
operation failed.
Step 7 to program a new address.
PP
PP
programming Voltage.
programming Voltage.
Rev. 1.2
PP
can be applied without damaging the device,
PP
pin. Each location in EPROM
PP
pin. Additionally, EPROM
PP
timing specifica-