C8051T627-B-GM Silicon Labs, C8051T627-B-GM Datasheet - Page 38

• Manufacturer Part Number: C8051T627-B-GM
• Description: 8-bit Microcontrollers - MCU UBS, 64K OTP MCU
• Manufacturer: Silicon Labs

Specifications of C8051T627-B-GM

• Rohs: yes
• Core: 8051
• Processor Series: C8051T627
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 48 MHz
• Program Memory Size: 64 KB
• Data Ram Size: 3328 B
• On-chip Adc: Yes
• Operating Supply Voltage: 1.8 V to 5.25 V
• Operating Temperature Range: - 40 C to + 85 C
• Package / Case: QFN-32
• Mounting Style: SMD/SMT
• Program Memory Type: EPROM

C8051T620/1/6/7 & C8051T320/1/2/3
Table 7.6. EPROM Electrical Characteristics
Table 7.7. Internal High-Frequency Oscillator Electrical Characteristics
V
38
EPROM Size (Note 1)
Write Cycle Time (per
Byte)
(Note 2)
In-Application Program-
ming Write Cycle Time
(per Byte)
(Note 3)
Programming Voltage
(V
Capacitor on V
application Programming
Notes:
Oscillator Frequency
Oscillator Supply Current 
(from V
Power Supply Sensitivity
Temperature Sensitivity
Note: Represents mean ±1 standard deviation.
DD
PP
1. 512 bytes at location 0x3E00 to 0x3FFF are not available for program storage on the 16k devices, and 512
2. For devices with a Date Code prior to 1040, the programming time over the C2 interface is twice as long. See
3. Duration of write time is largely dependent on VIO voltage, supply voltage, and residual charge on the VPP
= 2.7 to 3.6 V; T
)
bytes at location 0xFE00 to 0xFFFF are not available for program storage on the C8051T626.
Section 18.1.1
capacitor. The majority of the write time consists of charging the voltage on VPP to 6.0 V. These
measurements include the VPP ramp time and VDD = VIO = 3.3 V
Parameters
DD
Parameters
)
PP
for In-
A
= –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
for more information.
C8051T620/1 & C8051T320/1/2/3
C8051T626
C8051T627
Capacitor on V
discharged
Capacitor on V
tially charged to 3.3 V
25 °C, V
OSCICN.7 = 1,
OSCICN.5 = 0
IFCN = 11b
Constant Temperature
Constant Supply
C8051T626/7/T320/1/2/3
Test Condition
Test Condition
DD
PP
PP
= 3.0 V,
= 4.7 µF and fully
= 4.7 µF and ini-
C8051T626/7
Rev. 1.2
47.28
Min
—
—
—
—
16384
65535
32768
5.75
Min
105
—
—
—
±0.02
Typ
900
925
±20
48
Typ
155
6.0
4.7
37
26
—
—
—
48.72
1000
1100
Max
—
—
Max
6.25
205
—
—
—
—
—
—
ppm/°C
MHz
Unit
%/V
bytes
bytes
bytes
µA
µA
Unit
ms
ms
µF
µs
V