MC908QC16CDZE Freescale Semiconductor, MC908QC16CDZE Datasheet - Page 255

• Manufacturer Part Number: MC908QC16CDZE
• Description: IC MCU 8BIT 16K FLASH 28-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908QC16CDZE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 24
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Processor Series: HC08QC
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: ESCI/SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 26
• Number Of Timers: 6
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10-ch x 10-bit
• For Use With: DEMO908QC16 - BOARD DEMO FOR MC908QC16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

19.17 Memory Characteristics
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH PGM/ERASE supply voltage (V
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
1. Typical values are for reference only and are not tested in production.
2. Values are based on characterization results, not tested in production.
3. f
4. t
5. t
6. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25 C using the Arrhenius equation. For additional information on how Freescale definesTypical Data Retention, please
refer to Engineering Bulletin EB618.
RCV
Read
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the frequency range for which the FLASH memory can be read.
(6)
MC68HC908QC16 • MC68HC908QC8 • MC68HC908QC4 Data Sheet, Rev. 5
Characteristic
(7)
(2)
NVS
+ t
DD
NVH
)
+ t
PGS
+ (t
PROG
x 32) ≤ t
V
PGM/ERASE
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(5)
(4)
(3)
10 k
Min
100
1.3
2.7
3.6
10
30
15
—
1
0
4
5
5
1
Typ
100 k
100
—
—
—
—
—
—
—
—
—
—
—
—
4
Memory Characteristics
(1)
Max
8 M
5.5
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
V
V
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