MC908QC16CDZE Freescale Semiconductor, MC908QC16CDZE Datasheet - Page 43

• Manufacturer Part Number: MC908QC16CDZE
• Description: IC MCU 8BIT 16K FLASH 28-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908QC16CDZE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 24
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Processor Series: HC08QC
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: ESCI/SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 26
• Number Of Timers: 6
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10-ch x 10-bit
• For Use With: DEMO908QC16 - BOARD DEMO FOR MC908QC16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

For EEPROM emulation software to work successfully, the following items must be taken care of in the
user software:
The above EEPROM emulation software can be easily developed by using the on-chip FLASH routines
implemented in the MCU. These routines are located in the ROM memory and support FLASH program
and erase operations. Proper utilization of the on-chip FLASH routines guarantee conformance to the
FLASH specifications.
In the on-chip FLASH programming routine called PRGRNGE, the high-voltage programming time is
enabled for less than 125 µs when programming a single byte at any operating bus frequency between
1.0 MHz and 8.4 MHz. Therefore, even when a row is programmed by 32 separate single-byte
programming operations, t
care of by using this routine.
A page erased operation is provided in the FLASH erase routine called ERARNGE.
Application note AN2635 (On-Chip FLASH Programming Routines) describes how to use these routines.
The following application notes, available at www.freescale.com, describe how EERPOM emulation is
implemented using FLASH:
An EEPROM emulation driver, available at www.freescale.com, has been developed and qualified:
Freescale Semiconductor
1. Each FLASH byte in a page must be programmed only one time until the page is erased.
2. A page must be erased before the FLASH cumulative program HV period (t
3. FLASH row erase and program cycles should not exceed 10,000 cycles, respectively.
maximum t
before the next erase. For more detailed information, refer to
AN2183 — Using FLASH as EEPROM on the MC68HC908GP32
AN2346 — EEPROM Emulation Using FLASH in MC68HC908QY/QT MCUs
AN2690 — Low Frequency EEPROM Emulation on the MC68HC908QY4
AN3040 — M68HC08 EEPROM Emulation Driver
HV
MC68HC908QC16 • MC68HC908QC8 • MC68HC908QC4 Data Sheet, Rev. 5
. t
HV
is defined as the cumulative high-voltage programming time to the same row
HV
is less than the maximum t
HV
. Hence, item 2 listed above is already taken
19.17 Memory
FLASH Memory (FLASH)
HV
Characteristics.
) is beyond the
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