DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 217

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

6.5.5
Table 6.7 shows the pins used for DRAM interfacing and their functions.
Table 6.7
Pin
HWR
LCAS
CS2
CS3
CS4
CS5
CAS
WAIT
A
D
12
15
to A
to D
0
0
Pins Used for DRAM Interface
With DRAM
Setting
WE
LCAS
RAS2
RAS3
RAS4
RAS5
UCAS
WAIT
A
D
DRAM Interface Pins
12
15
to A
to D
0
0
Name
Write enable
Lower column address
strobe
Row address strobe 2
Row address strobe 3
Row address strobe 4
Row address strobe 5
Upper column address
strobe
Wait
Address pins
Data pins
I/O
Output
Output
Output
Output
Output
Output
Output
Input
Output
I/O
Rev.6.00 Sep. 27, 2007 Page 185 of 1268
Function
When 2-CAS system is set,
write enable for DRAM space
access
Lower column address strobe
for 16-bit DRAM space access
Row address strobe when area
2 is designated as DRAM space
Row address strobe when area
3 is designated as DRAM space
Row address strobe when area
4 is designated as DRAM space
Row address strobe when area
5 is designated as DRAM space
Upper column address strobe
for DRAM space access
Wait request signal
Row address/column address
multiplexed output
Data input/output pins
Section 6 Bus Controller
REJ09B0220-0600