DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 219

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

6.5.7
When DRAM is accessed, an RAS precharging time must be secured. With the chip, one T
is always inserted when DRAM space is accessed. This can be changed to two T
the TPC bit in MCR to 1. Set the appropriate number of T
connected and the operating frequency of the chip. Figure 6.16 shows the timing when two T
states are inserted.
When the TCP bit is set to 1, two T
Read
Write
Note: n = 2 to 5
Precharge State Control
CAS, LCAS
CSn (RAS)
HWR (WE)
HWR (WE)
D
A
D
15
23
15
to D
to D
to A
φ
0
0
0
Figure 6.16 Timing with 2-State Precharge Cycle
T
p1
p
states are also used for refresh cycles.
T
p2
Rev.6.00 Sep. 27, 2007 Page 187 of 1268
Row
T
p
r
cycles according to the DRAM
Column
T
c1
Section 6 Bus Controller
REJ09B0220-0600
p
states by setting
T
c2
p
state
p