DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 937
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Table 19.66 Command Wait State Transition Time Specifications
Item
Standby release (oscillation
stabilization time)
PROM mode setup time
V
19.29.10 Notes on Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
• When performing programming using PROM mode on a chip that has been
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
Figure 19.85 Oscillation Stabilization Time, PROM Mode Setup Time, and Power Supply
CC
erasing before auto-programming.
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
hold time
V
RES
FWE
Note: Except in auto-program mode and auto-erase mode, drive the FWE input pin low.
CC
2. Auto-programming should be performed once only on the same address block.
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
Additional programming cannot be carried out on address blocks that have already
been programmed.
t
osc1
t
bmv
Symbol
t
t
t
osc1
bmv
dwn
Memory read
mode
Command
wait state
Fall Sequence
Min
30
10
0
Auto-program mode
Auto-erase mode
Rev.6.00 Sep. 27, 2007 Page 905 of 1268
Max
—
—
—
Command
wait state
Normal/
abnormal end
identification
REJ09B0220-0600
t
Section 19 ROM
dwn
Unit
ms
ms
ms
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