DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 761
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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[2] Set the DAOE0 bit in DACR01 to 1. D/A conversion is started and the DA0 pin becomes an
[3] If DADR0 is written to again, the new data is immediately converted. The new conversion
[4] If the DAOE0 bit is cleared to 0, the DA0 pin becomes an input pin.
output pin. The conversion result is output after the conversion time has elapsed. The output
value is expressed by the following formula:
The conversion results are output continuously until DADR0 is written to again or the DAOE0
bit is cleared to 0.
result is output after the conversion time has elapsed.
DADR contents
φ
Address
DADR0
DAOE0
DA0
Legend:
t
DCONV
: D/A conversion time
256
High-impedance state
write cycle
DADR0
Figure 17.2 Example of D/A Converter Operation
×
V
ref
write cycle
DACR01
Conversion data 1
t
DCONV
Conversion
result 1
Rev.6.00 Sep. 27, 2007 Page 729 of 1268
write cycle
DADR0
t
DCONV
Conversion data 2
Section 17 D/A Converter
Conversion
result 2
REJ09B0220-0600
write cycle
DACR01
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