DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 556
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 10 16-Bit Timer Pulse Unit (TPU)
Contention between TGR Write and Compare Match: If a compare match occurs in the T
state of a TGR write cycle, the TGR write takes precedence and the compare match signal is
inhibited. A compare match does not occur even if the same value as before is written.
Figure 10.51 shows the timing in this case.
Rev.6.00 Sep. 27, 2007 Page 524 of 1268
REJ09B0220-0600
φ
Address
Write signal
Compare
match signal
TCNT
TGR
Figure 10.51 Contention between TGR Write and Compare Match
TGR write data
N
N
TGR write cycle
TGR address
T
1
T
2
N+1
M
Inhibited
2
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