DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 370

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

Section 8 Data Transfer Controller
Table 8.10 Number of States Required for Each Execution Phase
Access To:
Bus width
Access states
Execution
phase
The number of execution states is calculated from the formula below. Note that Σ means the sum
of all transfers activated by one activation event (the number in which the CHNE bit is set to 1,
plus 1).
For example, when the DTC vector address table is located in on-chip ROM, normal mode is set,
and data is transferred from the on-chip ROM to an internal I/O register, the time required for the
DTC operation is 13 states. The time from activation to the end of the data write is 10 states.
Rev.6.00 Sep. 27, 2007 Page 338 of 1268
REJ09B0220-0600
Number of execution states = I · S
Vector read
Register
information
read/write
Byte data read
Word data read
Byte data write
Word data write
Internal operation S
S
S
S
S
S
S
I
J
K
K
L
L
M
On-
Chip
RAM
32
1
1
1
1
1
1
—
1
I
+ Σ (J · S
On-
Chip
ROM
16
1
1
1
1
1
1
—
Internal I/O
Registers
8
2
—
2
4
2
4
—
J
+ K · S
16
2
2
2
2
2
—
—
K
+ L · S
External Devices
8
2
2
4
2
4
4
—
L
) + M · S
3
6+2m 2
—
3+m
6+2m 2
3+m
6+2m 2
M
16
2
—
2
2
3
3+m
3+m
3+m
3+m
3+m
—