DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 865
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Table 19.37 AC Characteristics in Memory Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
A
Note: Data is latched at the rising edge of WE.
18
to A
Data
WE
OE
CE
Figure 19.48 Memory Read Mode Timing Waveforms after Command Write
0
CC
= 3.3 V ±0.3 V, V
t
Command write
ces
t
f
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
t
wep
t
SS
ds
H'00
= 0 V, T
t
dh
t
t
ceh
r
a
= 25°C ±5°C
Min
20
0
0
50
50
70
—
—
t
nxtc
Rev.6.00 Sep. 27, 2007 Page 833 of 1268
Max
—
—
—
—
—
—
30
30
Memory read mode
Address stable
Data
REJ09B0220-0600
Unit
µs
ns
ns
ns
ns
ns
ns
ns
Section 19 ROM
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