DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 908
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 19 ROM
19.24.2 User Program Mode
When set to user program mode, the chip can program and erase its flash memory by executing a
user program/erase control program. Therefore, on-board programming of the on-chip flash
memory can be carried out by providing ahead of time an on-board FWE control means to supply
programming data, and storing a program/erase control program in part of the program area if
necessary.
To select user program mode, select a mode that enables the on-chip flash memory (mode 6 or 7)
and apply a high level to the FWE pin. In this mode, on-chip supporting modules other than flash
memory operate as they normally would in modes 6 and 7.
While the SWE1 bit is set to 1 to perform programming or erasing for the addresses H'000000 to
H'03FFFF, this address area cannot be read. While the SWE2 bit is set to 1 to perform
programming or erasing for the addresses H'040000 to H'07FFFF, this address area cannot be
read. The control program that performs programming and erasing should be run in on-chip RAM
or flash memory except for the above address areas. When the program is located in external
memory, an instruction for programming the flash memory and the following instruction should
be located in on-chip RAM.
Figure 19.70 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Rev.6.00 Sep. 27, 2007 Page 876 of 1268
REJ09B0220-0600
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