DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 821
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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19.11.10 Notes on Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
• When performing programming using PROM mode on a chip that has been
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
19.12
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
the Renesas microcomputer device type with 512-kbyte on-chip flash memory (FZTAT512V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Powering on and off: When applying or disconnecting V
the flash memory in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Use the recommended algorithm when programming and erasing flash memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P or E bit in
FLMCR1, the watchdog timer should be set beforehand as a precaution against program runaway,
etc.
erasing before auto-programming.
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
2. Auto-programming should be performed once only on the same address block.
Flash Memory Programming and Erasing Precautions
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
Additional programming cannot be carried out on address blocks that have already
been programmed.
Rev.6.00 Sep. 27, 2007 Page 789 of 1268
CC
power, fix the RES pin low and place
REJ09B0220-0600
Section 19 ROM
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