HD6417709SF133B Renesas Electronics America, HD6417709SF133B Datasheet - Page 333

IC SUPERH MPU ROMLESS 208LQFP

HD6417709SF133B

Manufacturer Part Number
HD6417709SF133B
Description
IC SUPERH MPU ROMLESS 208LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7700r
Datasheet

Specifications of HD6417709SF133B

Core Processor
SH-3
Core Size
32-Bit
Speed
133MHz
Connectivity
EBI/EMI, FIFO, IrDA, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
96
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 2.05 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
208-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-

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Single Write: The basic timing chart for write access is shown in figure 10.18. In a single write
operation, following the Tr cycle in which ACTV command output is performed, a WRITA
command that performs auto-precharge is issued in the Tc1 cycle. In the write cycle, the write
data is output at the same time as the write command. In case of the write with auto-precharge
command, precharging of the relevant bank is performed in the synchronous DRAM after
completion of the write command, and therefore no command can be issued for the same bank
until precharging is completed. Consequently, in addition to the precharge wait cycle, Tpc, used in
a read access, cycle Trwl is also added as a wait interval until precharging is started following the
write command. Issuance of a new command for the same bank is deferred during this interval.
The number of Trwl cycles can be specified by the TRWL bits in MCR.
Rev. 5.00, 09/03, page 287 of 760

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