HD6417709SF133B Renesas Electronics America, HD6417709SF133B Datasheet - Page 349

• Manufacturer Part Number: HD6417709SF133B
• Description: IC SUPERH MPU ROMLESS 208LQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of HD6417709SF133B

• Core Processor: SH-3
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: EBI/EMI, FIFO, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 96
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 2.05 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 208-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -

Before mode register setting, a 100 s idle time (depending on the memory manufacturer) must be
guaranteed after powering on requested by the synchronous DRAM. If the reset signal pulse width
is greater than this idle time, there is no problem in performing mode register setting immediately.
The number of dummy auto-refresh cycles specified by the manufacturer (usually 8) or more must
be executed. This is usually achieved automatically while various kinds of initialization are being
performed after auto-refresh setting, but a way of carrying this out more dependably is to set a
short refresh request generation interval just while these dummy cycles are being executed. With
simple read or write access, the address counter in the synchronous DRAM used for auto-
refreshing is not initialized, and so the cycle must always be an auto-refresh cycle.
A15 to A13
or A15 to A12
CKIO
A11
A12 or A10
A9 to A2
CSn
RD/WR
RAS3U or RAS3L
CASU or CASL
D31 to D0
CKE
Figure 10.28 Synchronous DRAM Mode Write Timing
T
Rp1
(High)
T
Rp2
T
Rp3
T
Rp4
T
Mw1
Rev. 5.00, 09/03, page 303 of 760
T
Mw2
T
Mw3
T
Mw4