HD6412340 HITACHI [Hitachi Semiconductor], HD6412340 Datasheet - Page 604

• Manufacturer Part Number: HD6412340
• Description: H8S/2345 F-ZTAT Hardware Manual
• Manufacturer: HITACHI [Hitachi Semiconductor]

Table 17.22 DC Characteristics in Memory Read Mode
Item
Input high-level
voltage
Input low-level
voltage
Schmitt trigger
input voltage
Output high-level
voltage
Output low-level
voltage
Input leak current
V
Note: Refer to the maximum rating for the F-ZTAT version “20.1.1 Absolute Maximum Ratings.”
17.13.4 Memory Read Mode
592
CC
After the end of an auto-program, auto-erase, or status read operation, the command wait state
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
Command writes can be performed in memory read mode, just as in the command wait state.
Once memory read mode has been entered, consecutive reads can be performed.
After power-on, memory read mode is entered.
current
If the maximum rating is exceeded, the LSI may be damaged permanently.
(Conditions: V
FO
FO
OE, CE, WE
FO
FO
FO
During read
During programming I
During erasing
7
7
7
7
7
–FO
–FO
–FO
–FO
–FO
0
0
0
0
0
, FA
, FA
, FA
CC
= 5.0 V 10%, V
16
16
16
–FA
–FA
–FA
0
0
0
Symbol
V
V
V
V
V
V
V
| I
I
I
CC
CC
CC
IH
IL
T–
T+
T+
OH
OL
LI
–V
|
T–
SS
Min
2.2
0.3
1.0
2.0
0.4
2.4
—
—
—
—
—
= 0 V, T
Typ
—
—
—
—
—
—
—
—
40
50
50
a
= 25 C 5 C)
Max
V
0.3
0.8
2.5
3.5
—
—
0.45
2
65
85
85
CC
+
Unit
V
V
V
V
V
V
V
mA
mA
mA
A
Test
Conditions
I
I
OH
OL
= 1.6 mA
= –200 A