HD64F3664H Renesas Electronics America, HD64F3664H Datasheet - Page 140

IC H8 MCU FLASH 32K 64QFP

HD64F3664H

Manufacturer Part Number
HD64F3664H
Description
IC H8 MCU FLASH 32K 64QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet

Specifications of HD64F3664H

Core Processor
H8/300H
Core Size
16-Bit
Speed
16MHz
Connectivity
I²C, SCI
Peripherals
PWM, WDT
Number Of I /o
29
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Section 7 ROM
The FLMCR1, FLMCR2, and EBR1 settings are retained, however program mode or erase mode
is aborted at the point at which the error occurred. Program mode or erase mode cannot be re-
entered by re-setting the P or E bit. However, PV and EV bit setting is enabled, and a transition
can be made to verify mode. Error protection can be cleared only by a power-on reset.
7.6
In programmer mode, a PROM programmer can be used to perform programming/erasing via a
socket adapter, just as a discrete flash memory. Use a PROM programmer that supports the MCU
device type with the on-chip 64-kbyte flash memory (FZTAT64V5).
7.7
In user mode, the flash memory will operate in either of the following states:
• Normal operating mode
• Power-down operating mode
• Standby mode
Table 7.7 shows the correspondence between the operating modes of this LSI and the flash
memory. In subactive mode, the flash memory can be set to operate in power-down mode with the
PDWND bit in FLPWCR. When the flash memory returns to its normal operating state from
power-down mode or standby mode, a period to stabilize operation of the power supply circuits
that were stopped is needed. When the flash memory returns to its normal operating state, bits
STS2 to STS0 in SYSCR1 must be set to provide a wait time of at least 20 µs, even when the
external clock is being used.
Rev. 6.00 Mar. 24, 2006 Page 110 of 412
REJ09B0142-0600
The flash memory can be read and written to at high speed.
The power supply circuit of flash memory can be partly halted. As a result, flash memory can
be read with low power consumption.
All flash memory circuits are halted.
Programmer Mode
Power-Down States for Flash Memory

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