HD64F3664H Renesas Electronics America, HD64F3664H Datasheet - Page 357

• Manufacturer Part Number: HD64F3664H
• Description: IC H8 MCU FLASH 32K 64QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300H Tinyr

Specifications of HD64F3664H

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: I²C, SCI
• Peripherals: PWM, WDT
• Number Of I /o: 29
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 64-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Notes: 1. Make the time settings in accordance with the program/erase algorithms.
Item
Erase
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
3. The time required to erase one block. (Indicates the time for which the E bit in flash
4. Programming time maximum value (t
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
6. Erase time maximum value (t
7. Set the maximum maximum erase count (N) according to the actual set value of (z), so
Programming count (n)
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
maximum programming count (N)
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
count (N)
that it does not exceed the erase time maximum value (t
Wait time after SWE
bit setting*
Wait time after ESU
bit setting*
Wait time after E bit setting*
Wait time after E bit clear*
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after dummy write*
Wait time after EV bit clear*
Wait time after SWE bit clear*
Maximum erase count*
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
1
1
z1 = 30 µs
z2 = 200 µs
1
*
6
*
1
7
1
1
*
1
1
1
E
6
1
(max)) = wait time after E bit setting (z) × maximum erase
Symbol Condition
x
y
z
α
β
γ
ε
η
θ
N
P
(MAX)) = wait time after P bit setting (z) ×
Test
Rev. 6.00 Mar. 24, 2006 Page 327 of 412
Section 20 Electrical Characteristics
—
Min
1
100
10
10
10
20
2
4
100
E
(max)).
Typ
—
—
—
—
—
—
—
—
—
—
Values
REJ09B0142-0600
Max
—
—
100
—
—
—
—
—
—
120
P
(MAX)).
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times