ATMEGA16HVA-4CKU Atmel, ATMEGA16HVA-4CKU Datasheet - Page 159

MCU AVR 16K FLASH 4MHZ 36-LGA

ATMEGA16HVA-4CKU

Manufacturer Part Number
ATMEGA16HVA-4CKU
Description
MCU AVR 16K FLASH 4MHZ 36-LGA
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheet

Specifications of ATMEGA16HVA-4CKU

Core Processor
AVR
Core Size
8-Bit
Speed
4MHz
Connectivity
SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
7
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 9 V
Data Converters
A/D 5x12b
Oscillator Type
External
Operating Temperature
-20°C ~ 85°C
Package / Case
36-LGA
Processor Series
ATMEGA16x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SPI
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRSB200, ATAVRSB201
Minimum Operating Temperature
- 20 C
On-chip Adc
12 bit, 5 Channel
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK500 - PROGRAMMER AVR STARTER KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
27.8.5
27.8.6
27.8.7
27.8.8
27.8.9
27.8.10
8024A–AVR–04/08
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
Figure 27-5. High-voltage Serial Programming Waveforms
The EEPROM is organized in pages, see
When programming the EEPROM, the data is latched into a page buffer. This allows one page
of data to be programmed simultaneously. The programming algorithm for the EEPROM Data
memory is as follows (refer to
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
The algorithm for reading the Flash memory is as follows (refer to
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are available at
The algorithm for reading the EEPROM memory is as follows (refer to
160):
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at serial output
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in
Table 27-14 on page
The algorithms for reading the Signature bytes and Calibration byte are shown in
page
Exit Programming mode by powering the device down, or by bringing RESET pin to 0V.
ming” cycle to finish.
programmed.
serial output SDO.
SDO.
SDO
SDI
SCI
SII
160.
0
MSB
MSB
MSB
160.
1
2
Table 27-14 on page
3
4
”High-voltage Serial Programming” on page
5
160):
6
ATmega8HVA/16HVA
7
LSB
LSB
LSB
8
Table 27-14 on page
9
Table 27-14 on page
10
Table 27-14 on
160):
173.
159

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