ATMEGA16HVA-4CKU Atmel, ATMEGA16HVA-4CKU Datasheet - Page 170

• Manufacturer Part Number: ATMEGA16HVA-4CKU
• Description: MCU AVR 16K FLASH 4MHZ 36-LGA
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA16HVA-4CKU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 4MHz
• Connectivity: SPI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 7
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 9 V
• Data Converters: A/D 5x12b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 36-LGA
• Processor Series: ATMEGA16x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI
• Maximum Clock Frequency: 4 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRSB200, ATAVRSB201
• Minimum Operating Temperature: - 20 C
• On-chip Adc: 12 bit, 5 Channel
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK500 - PROGRAMMER AVR STARTER KIT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

29.5
Table 29-5.
Notes:
29.6
Table 29-6.
Note:
170
Parameter
VFET DC level
VFET ripple
OC, OD clamping
voltage
OC, OD
OC, OD
Risetime
(OC, OD, 0 - 90 %)
Falltime
(OC, OD, 100 - 10 %)
Symbol
V
V
V
V
t
RST
HYST
BLOT
POT
BOT
FET Driver Characteristics
1. All DC Characteristics contained in this data sheet are based on simulation and characterization of other AVR microcontrol-
2. These numbers assume the use of one external N-channel FET of model TPCS8210. If other FETs are used, the numbers
3. Not tested in production.
Power-on and Reset Characteristics
1. The voltage at the Pack + terminal will be slightly higher than V
(2)(3)
(2)(3)
ATmega8HVA/16HVA
lers manufactured in the same process technology. These values are preliminary values representing design targets, and
will be updated after characterization of actual silicon.
may deviate somewhat. The equivalent capacitive loads at OC and OD are around 1.2 nF. Rise and fall times scale approxi-
mately proportional to the capacitive loading
Pull-down current on the BATT pin in the range 50 - 110 uA and the R
and the BATT pin. R
(2)
Parameter
Power-on Threshold Voltage
Minimum pulse width on RESET Pin
Brown-Out Detection (BOD) Trigger
Level
BOD Level Hysteresis
Power-off Threshold Voltage
FET Driver Outputs specification
Reset Characteristics(T
(2)
Condition
1 cell DUVR operation,
VREF = 1.100V
2 cell DUVR operation,
VREF = 1.100V
1 cell DUVR operation
2 cell DUVR operation
Normal ON operation
Normal OFF operation
Normal ON operation
Normal OFF operation
BATT
= 1k gives a voltage drop 0.05 - 0.11V.
A
(1)
= -10°C to 70°C unless otherwise specified)
(1)
(T
A
= -10°C to 70°C unless otherwise specified)
VFET = 8.4V
VFET = 4.2V
VFET + 2.5
Condition
Min.
1.9
3.8
POT
when the chip is enabled. This is because of an internal
BATT
VFET + 4
Typ.
±0.1
±0.1
14.0
2.75
2.75
Min
2.0
4.0
0.0
resistor connected between the Pack + terminal
1
5
VFET + 6.5
3.65
Typ
900
100
3.5
2.9
2.4
Max.
2.1
4.2
0.1
10
2
Max
3.95
4.1
8024A–AVR–04/08
Units
ms
µs
V
V
V
V
V
V
V
Units
mV
ns
V
V
V