PIC18F8722-I/PT Microchip Technology Inc., PIC18F8722-I/PT Datasheet - Page 115

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PIC18F8722-I/PT

Manufacturer Part Number
PIC18F8722-I/PT
Description
80 PIN, 128 KB FLASH, 4K RAM, 70 I/O
Manufacturer
Microchip Technology Inc.
Datasheet

Specifications of PIC18F8722-I/PT

A/d Inputs
16-Channel, 10-Bit
Comparators
2
Cpu Speed
10 MIPS
Eeprom Memory
1024 Bytes
Input Output
70
Interface
SPI/I2C/USART
Memory Type
Flash
Number Of Bits
8
Package Type
80-pin TQFP
Programmable Memory
128K Bytes
Ram Size
3.9K Bytes
Speed
40 MHz
Timers
2-8 bit, 3-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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0
8.3
To read a data memory location, the user must write the
address to the EEADRH:EEADR register pair, clear the
EEPGD control bit (EECON1<7>) and then set control
bit, RD (EECON1<0>). The data is available on the
very next instruction cycle; therefore, the EEDATA
register can be read by the next instruction. EEDATA
will hold this value until another read operation, or until
it is written to by the user (during a write operation).
The basic process is shown in Example 8-1.
8.4
To write an EEPROM data location, the address must
first be written to the EEADRH:EEADR register pair
and the data written to the EEDATA register. The
sequence in Example 8-2 must be followed to initiate
the write cycle.
The write will not begin if this sequence is not exactly
followed (write 55h to EECON2, write 0AAh to
EECON2, then set WR bit) for each byte. It is strongly
recommended that interrupts be disabled during this
code segment.
EXAMPLE 8-1:
EXAMPLE 8-2:
 2004 Microchip Technology Inc.
Required
Sequence
Reading the Data EEPROM
Memory
Writing to the Data EEPROM
Memory
MOVLW
MOVWF
MOVLW
MOVWF
BCF
BCF
BSF
MOVF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BCF
BCF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BCF
DATA_EE_ADDRH
EEADRH
DATA_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, CFGS
EECON1, RD
EEDATA, W
DATA EEPROM READ
DATA EEPROM WRITE
DATA_EE_ADDRH
EEADRH
DATA_EE_ADDR
EEADR
DATA_EE_DATA
EEDATA
EECON1, EPGD
EECON1, CFGS
EECON1, WREN
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
EECON1, WREN
;
; Upper bits of Data Memory Address to read
;
; Lower bits of Data Memory Address to read
; Point to DATA memory
; Access EEPROM
; EEPROM Read
; W = EEDATA
;
; Upper bits of Data Memory Address to write
;
; Lower bits of Data Memory Address to write
;
; Data Memory Value to write
; Point to DATA memory
; Access EEPROM
; Enable writes
; Disable Interrupts
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Enable Interrupts
; User code execution
; Disable writes on write complete (EEIF set)
Preliminary
Additionally, the WREN bit in EECON1 must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code exe-
cution (i.e., runaway programs). The WREN bit should
be kept clear at all times, except when updating the
EEPROM. The WREN bit is not cleared by hardware.
After a write sequence has been initiated, EECON1,
EEADRH:EEADR and EEDATA cannot be modified.
The WR bit will be inhibited from being set unless the
WREN bit is set. The WREN bit must be set on a
previous instruction. Both WR and WREN cannot be
set with the same instruction.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EEPROM Interrupt Flag bit
(EEIF) is set. The user may either enable this interrupt,
or poll this bit. EEIF must be cleared by software.
8.5
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
PIC18F8722 FAMILY
Write Verify
DS39646B-page 113

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