DSPIC33FJ16MC101T-I/SS Microchip Technology, DSPIC33FJ16MC101T-I/SS Datasheet - Page 66

• Manufacturer Part Number: DSPIC33FJ16MC101T-I/SS
• Description: 16-bit Motor Control DSC Family, 16 MIPS, 16KB Flash, 1KB RAM 20 SSOP .209in T/R
• Manufacturer: Microchip Technology
• Series: dsPIC™ 33Fr

Specifications of DSPIC33FJ16MC101T-I/SS

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 16 MIPs
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Motor Control PWM, POR, PWM, WDT
• Number Of I /o: 15
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-SSOP (0.209", 5.30mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

dsPIC33FJ16GP101/102 AND dsPIC33FJ16MC101/102
5.2
The
dsPIC33FJ16MC101/102 Flash program memory
array is organized into rows of 64 instructions or 192
bytes. RTSP allows the user application to erase a
page of memory, which consists of eight rows (512
instructions); and to program one word.
shows typical erase and programming times. The 8-
row erase pages are edge-aligned from the beginning
of program memory, on boundaries of 1536 bytes.
5.3
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. The processor stalls (waits) until the operation is
finished.
For erase and program times, refer to parameters
DI37a and DI37b (Page Erase Time), and DI38a and
DI38b (Word Write Cycle Time), in
Characteristics: Program
Setting the WR bit (NVMCON<15>) starts the opera-
tion, and the WR bit is automatically cleared when the
operation is finished.
5.3.1
Programmers can program one word (24 bits) of
program Flash memory at a time. To do this, it is
necessary to erase the 8-row erase page that contains
the desired address of the location the user wants to
change.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
application must wait for the programming time until
programming is complete. The two instructions
following the start of the programming sequence
should be NOPs.
Refer to Section 5. “Flash Programming” (DS70191)
in the “dsPIC33F/PIC24H Family Reference Manual”
for details and codes examples on programming using
RTSP.
DS70652C-page 66
Note:
RTSP Operation
Programming Operations
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
Performing a page erase operation on the
last page of program memory will clear the
Flash
enabling code protection as a result.
Therefore, users should avoid performing
page erase operations on the last page of
program memory.
dsPIC33FJ16GP101/102
Configuration
Memory”.
words,
Table
Table 26-12
26-12:
thereby
“DC
and
Preliminary
5.4
Two SFRs are used to read and write the program
Flash memory: NVMCON and NVMKEY.
The NVMCON register
blocks are to be erased, which memory type is to be
programmed, and the start of the programming cycle.
NVMKEY is a write-only register that is used for write
protection. To start a programming or erase sequence,
the user application must consecutively write 0x55 and
0xAA to the NVMKEY register. Refer to
“Programming Operations”
Control Registers
© 2011 Microchip Technology Inc.
(Register
for further details.
5-1) controls which
Section 5.3