MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 2

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Part Numbering Information
Figure 1:
Valid Part Number Combinations
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. 1.0 2/09 EN
Micron Technology
Single-Supply NAND Flash
29F = Single-supply NAND
Density
8G = 8Gb
Device Width
08 = 8 bits
Level
A
Classification
B
Operating Voltage Range
A = Vcc: 3.3V (2.7–3.6V), VccQ: 3.3V (2.7–3.6V)
C = Vcc: 3.3V (2.7–3.6V), VccQ: 1.8V (1.7–1.95V)
Generation Feature Set
B = Second set of device features
Interface
A = Async only
B = Sync / Async
Bit/Cell
1-bit
Die # of CE# # of R/B# I/O
Flash memory
1
1
Marketing Part Number Chart
1
Notes:
MT 29F 8G 08
Common
1. Lead-free package.
Micron NAND Flash devices are available in different configurations and densities (see
Figure 1).
After building the part number from the part numbering chart, verify that the part is
offered and valid by using the Micron Parametric Part Search Web Site at:
www.micron.com/products/parametric.
contact the factory.
A
B
Micron Confidential and Proprietary
A
8Gb Asynchronous/Synchronous NAND Flash Memory
B
A WP
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
If the device required is not on this list,
ES :B
Part Numbering Information
Design Revision
B = Second revision
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
QS = Qualification sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85C)
Speed Grade (synchronous mode only)
12 = 166 MT/s
Package Code
C3 = 52-pad ULGA 12mm x 17mm x 0.65mm
H1 = 100-ball VBGA 12mm x 18mm x 1.0mm
WP = 48-pin TSOP
WC = 48-pin TSOP
©2008 Micron Technology, Inc. All rights reserved.
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