MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 97

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 35:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Parameter
AC input high voltage
AC input low voltage
DC input high voltage
DC input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Output low current (R/B#)
1.8V VccQ Device Operating Characteristics
Notes:
1. The DC values only apply to the synchronous interface.
2. V
3. All leakage currents are per LUN.
Any input V
I/Os are disabled; V
CE#, DQ[7:0], DQS, ALE,
DQ[7:0], DQS, ALE, CLE,
CLK (WE#), W/R# (R/E#)
OH
W/R# (R/E#), WP#
under test = 0V)
CLE, CLK (WE#),
(all other pins
and V
I
I
OH
OL
Condition
0V to V
V
OL
= -100µA
= -100µA
IN
= 0.2V
OL
= 0V to V
Micron Confidential and Proprietary
CC
only apply to the asynchronous interface.
Q
8Gb Asychronous/Synchronous NAND Flash Memory
OUT
CC
=
Q
I
Symbol
V
V
OL
V
V
97
IH
IH
IL
IL
V
V
I
(R/B#)
I
LO
OH
(AC)
(DC)
OL
LI
(AC)
(DC)
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC
V
V
0.8 ×
0.7 ×
Min
-0.3
-0.3
Q - 0.1
CC
CC
–
–
–
3
Q
Q
Typ
–
–
–
–
–
4
–
–
–
Electrical Characteristics
V
V
V
V
0.2 ×
0.3 ×
Max
CC
CC
©2008 Micron Technology, Inc. All rights reserved.
±10
±10
0.3
0.3
0.1
CC
CC
–
–
Q +
Q +
Q
Q
Unit
mA
µA
µA
V
V
V
V
V
V
Advance
Notes
–
–
1
1
2
2
3
3
–