MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 65

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

READ PAGE CACHE SEQUENTIAL (31h)
Figure 42:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
I/O[7:0] (DQ[7:0])
Cycle type
RDY
READ PAGE CACHE SEQUENTIAL (31h) Operation
Command
Caution
00h
Page Address M
Address x5
1. R/B# goes LOW and the LUN is busy (RDY = 0, ARDY = 0) for
2. R/B# goes HIGH and the LUN is busy with a cache operation (RDY = 1, ARDY = 0),
3. Data can be output from the cache register, beginning at column address 0. The
1. The SELECT LUN WITH STATUS (78h) command is issued.
2. The READ MODE (00h) command is issued.
The READ PAGE CACHE SEQUENTIAL (31h) command reads the next page in sequence
within a block into the data register, while the previous page is output from the cache
register. This command is accepted by the LUN when it is ready (RDY = 1, ARDY = 1). It is
also accepted by the LUN during READ PAGE CACHE (31h, 00h-31h) operations
(RDY = 1 and ARDY = 0).
This command is issued when 31h is written to the command register. After the
command is issued, the following sequence occurs:
The READ PAGE CACHE SEQUENTIAL (31h) command can be used to cross block boundaries. If
the READ PAGE CACHE SEQUENTIAL (31h) command is issued after the last page of a block is
read into the data register, the next page read will be the next logical block in the plane which
the 31h command was issued. Do no issue the READ PAGE CACHE SEQUENTIAL (31h) command
to cross LUN boundaries. Instead issue the READ PAGE CACHE LAST (3Fh) command for the last
page of a LUN.
In devices that have more than one LUN per target, during and following multi-LUN
operations, this sequence is followed to select only one LUN and prevent bus conten-
tion:
indicating that the cache register is available and that the specified page is copying
from the NAND Flash array to the data register.
CHANGE READ COLUMN (05h-E0h) command can be used to change the column
address of the data being output from the cache register.
Command
30h
t WB
Micron Confidential and Proprietary
t R
RR
8Gb Asychronous/Synchronous NAND Flash Memory
Command
31h
t WB
65
t RCBSY
t RR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
D0
OUT
Page M
D
…
OUT
D
Dn
OUT
Command Definitions
Command
©2008 Micron Technology, Inc. All rights reserved.
31h
t
RCBSY.
t WB
t RCBSY
t RR
Page M+1
Advance
D
D0
OUT