MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 55

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 12:
Table 13:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Sub-Feature
Parameter
P1
R/B# pull-down
strength
Reserved
P2
Reserved
P3
Reserved
P4
Reserved
Sub-Feature
Parameter
P1
Array Operation
Mode
Reserved
P2
Reserved
P3
Reserved
P4
Reserved
Feature Addresses 81h: Programmable R/B# Pull-Down Strength
Feature Addresses 90h: Array Operation Mode
Notes:
Notes:
Full (default)
Three-quarter
One-half
One-quarter
Normal
(default)
OTP Block
Options
Options
1. This feature address is used to change the default R/B# pull-down strength. Its strength
1. See “One-Time Programmable (OTP) Operations” on page 82 for details.
should be selected based on the expected loading of R/B#. Full strength is the default,
power-on value.
(DQ7)
(DQ7)
I/O7
I/O7
0
0
0
0
0
0
0
0
Micron Confidential and Proprietary
(DQ6)
(DQ6)
I/O6
I/O6
0
0
0
0
0
0
0
0
8Gb Asychronous/Synchronous NAND Flash Memory
(DQ5)
(DQ5)
I/O5
I/O5
0
0
0
0
0
0
0
0
55
(DQ4)
(DQ4)
I/O4
I/O4
0
0
0
0
0
0
0
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(DQ3)
(DQ3)
I/O3
I/O3
0
0
0
0
0
0
0
0
(DQ2)
(DQ2)
I/O2
I/O2
0
0
0
0
0
0
0
0
(DQ1)
(DQ1)
I/O1
I/O1
Command Definitions
0
0
1
1
0
0
0
0
0
0
0
©2008 Micron Technology, Inc. All rights reserved.
(DQ0)
(DQ0)
I/O0
I/O0
0
1
0
1
0
0
0
0
1
0
0
0
Value
Value
00h
01h
02h
03h
00h
00h
00h
00h
00h
01h
00h
00h
00h
00h
Advance
Notes
Notes
1
1